MACOM NPT35015D 氮化镓场效应晶体管, 氮化镓, 3000-4000MHz

Gain: 10.5 dB

Technology: GaN

Output Power: 1.7 W

Mounting Style: SMD/SMT

Transistor Type: HEMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 28 W

Maximum Operating Frequency: 3.8 GHz

Minimum Operating Frequency: 3.3 GHz

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 200 C

Rds On - Drain-Source Resistance: 450 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: - 1.8 V