MACOM NPTB00004B 射频JFET晶体管 晶体管，28V 5W DC-6GHz HEMT
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ModelNPTB00004B
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Gain: 14.8 dB
Technology: Si
Output Power: 5 W
Mounting Style: SMD/SMT
Transistor Type: HEMT
Moisture Sensitive: Yes
Operating Frequency: 6 GHz
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 1.6 Ohms
Vds - Drain-Source Breakdown Voltage: 28 V
Vgs th - Gate-Source Threshold Voltage: - 2.1 V
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