MACOM NPTB00004B 射频JFET晶体管 晶体管，28V 5W DC-6GHz HEMT

Gain: 14.8 dB

Technology: Si

Output Power: 5 W

Mounting Style: SMD/SMT

Transistor Type: HEMT

Moisture Sensitive: Yes

Operating Frequency: 6 GHz

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 1.6 Ohms

Vds - Drain-Source Breakdown Voltage: 28 V

Vgs th - Gate-Source Threshold Voltage: - 2.1 V