MACOM PTFB201402FC-V2-R0 射频功率MOSFET 射频LDMOS场效应管
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ModelPTFB201402FC-V2-R0
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Gain: 16 dB
Technology: Si
Output Power: 140 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 2.01 GHz to 2.025 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: 10 V
Maximum Operating Temperature: + 225 C
Rds On - Drain-Source Resistance: 300 mOhms
Vds - Drain-Source Breakdown Voltage: 65 V
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