MACOM PTFC210202FC-V1-R0 射频功率MOSFET 射频LDMOS场效应管

Gain: 21 dB

Technology: Si

Unit Weight: 5.887 g

Output Power: 28 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.8 GHz to 2.2 GHz

Transistor Polarity: Dual N-Channel

Vgs - Gate-Source Voltage: 10 V

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V