MACOM PTVA120252MT-V1-R1K 射频功率MOSFET 射频LDMOS场效应管

Gain: 19.5 dB

Technology: Si

Output Power: 25 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 500 MHz to 1.4 GHz

Transistor Polarity: Dual N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 2.8 Ohms

Vds - Drain-Source Breakdown Voltage: 105 V