MACOM PTVA120501EA-V1-R0 射频功率MOSFET 射频LDMOS场效应管

Gain: 17 dB

Technology: Si

Output Power: 50 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1.2 GHz to 1.4 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: 3.5 V

Id - Continuous Drain Current: 50 mA

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 105 V