MACOM PTVA127002EV-V1-R250 射频功率MOSFET 射频LDMOS场效应管

Gain: 16 dB

Technology: Si

Output Power: 700 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1.2 GHz to 1.4 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 105 V