MACOM PXAC201202FC-V2-R0 射频功率MOSFET 射频LDMOS场效应管

Gain: 16.5 dB

Technology: Si

Output Power: 120 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.8 GHz to 2.2 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: 2.69 V

Id - Continuous Drain Current: 240 mA

Rds On - Drain-Source Resistance: 300 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V