MACOM PXAE263708NB-V1-R2 射频功率MOSFET 370W 硅LDMOS 28V 2496至2690MHz

Gain: 13.5 dB

Technology: Si

Output Power: 400 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 2.62 GHz to 2.69 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 6 V to + 10 V

Maximum Operating Temperature: + 225 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 65 V