Micro Commercial Components (MCC) MCPF180N65SH-BP MOSFETs N沟道MOSFET，TO-220F

Technology: Si

Mounting Style: Through Hole

Qg - Gate Charge: 33 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 48 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 8.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 180 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V