Micro Commercial Components (MCC) MIP10N65AT0Y-BP IGBT晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 100 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 650 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 20 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 20 A