Micro Commercial Components (MCC) MIP15R12E1TN-BP IGBT模块

Technology: Si

Mounting Style: Screw Mount

Pd - Power Dissipation: 142 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.25 V

Continuous Collector Current at 25 C: 15 A