Micro Commercial Components (MCC) MIS80N120NT1YHE3-BP IGBT模块 IGBT 1200V 80A STO-220

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 735 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 145 A