Micro Commercial Components (MCC) MIW40N120FLAHE3-BP IGBT晶体管沟槽场停止IGBT 1200V 40A

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Pd - Power Dissipation: 428 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 80 A