Micro Commercial Components (MCC) MIW50N65F-BP IGBT晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 326 W

Continuous Collector Current: 50 A

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.05 V

Continuous Collector Current at 25 C: 50 A