Micro Commercial Components (MCC) MIWP75N120DH1Y-BP IGBT晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 600 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 1.2 kV

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 150 A

Collector-Emitter Saturation Voltage: 2.6 V

Continuous Collector Current at 25 C: 150 A