Micro Commercial Components (MCC) SI2015KL3-TP MOSFETs N沟道MOSFET，DFN1006-3

Technology: Si

Mounting Style: SMD/SMT

Qg - Gate Charge: 600 pC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 700 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 1.1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 350 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V