Micro Commercial Components (MCC) SICW080N120Y4-BP SiC MOSFETS N沟道MOSFET，TO-247-4

Technology: SiC

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 41 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 223 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Id - Continuous Drain Current: 39 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 122 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.9 V