Micro Commercial Components (MCC) SICW1000N170A-BP SiC MOSFETS N沟道MOSFET，TO-247AB

Technology: SiC

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 15.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 69 W

Vgs - Gate-Source Voltage: - 5 V, + 25 V

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.69 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V