Microchip Technology 2N3628 双极型晶体管 BJTs - 功率双极型晶体管

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 7.5 W

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1.5 V