Microchip Technology 2N3634UB/TR 双极晶体管 BJTs 140V 1A 1W 3针 CER 小信号 BJT THT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 600 mV