Microchip Technology 2N3868U4 双极晶体管 60V 3mA 1W 功率 BJT 表面贴装

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 35

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.5 V