Microchip Technology 2N5002 双极型晶体管 BJTs - 功率双极型晶体管

Technology: Si

Unit Weight: 6.442 g

Configuration: Single

Mounting Style: Stud Mount

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

Emitter- Base Voltage VEBO: 5.5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1.5 V