Microchip Technology 2N6990 双极型晶体管 BJTs 50V 800mA 400mW NPN 四联 - 小信号 BJT 表面贴装

Technology: Si

Unit Weight: 400 mg

Configuration: Quad

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 325 at 1 mA, 10 VDC

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 75 at 1 mA, 10 VDC

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV