Microchip Technology APT100GN60LDQ4G IGBT晶体管 IGBT场停止低频组合 600 V 100 A TO-246

Width: 20.5 mm

Height: 5.21 mm

Length: 26.49 mm

Technology: Si

Unit Weight: 10.600 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 625 W

Operating Temperature Range: - 55 C to + 175 C

Continuous Collector Current: 229 A

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 229 A

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 229 A