Microchip Technology APT100GT60JR SiC IGBT 模块 FG，IGBT，600V，100A，SOT-227

Technology: SiC

Unit Weight: 29.200 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 500 W

Gate-Emitter Leakage Current: 300 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 148 A