Microchip Technology APT150GN60LDQ4G IGBT晶体管 IGBT场停止低频组合 600 V 150 A TO-264

Technology: SiC

Unit Weight: 10 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 536 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 220 A