Microchip Technology APT200GN60J IGBT模块 IGBT场停止低频单极 600 V 200 A SOT-227

Width: 25.4 mm

Height: 9.6 mm

Length: 38.2 mm

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 682 W

Operating Temperature Range: - 55 C to + 175 C

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 283 A