Microchip Technology APT20GN60BDQ2G IGBT晶体管 IGBT场停止低频组合 600 V 20 A TO-247

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 136 W

Gate-Emitter Leakage Current: 300 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 40 A