Microchip Technology APT25GP120BDQ1G IGBT晶体管 IGBT PT MOS 7 组合 1200 V 25 A TO-247

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 417 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 69 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 69 A

Collector-Emitter Saturation Voltage: 3.3 V

Continuous Collector Current at 25 C: 69 A