Microchip Technology APT25GP90BDQ1G IGBT晶体管 IGBT PT MOS 7 组合 900 V 25 A TO-247

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 417 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 72 A