Microchip Technology APT30GP60BDQ1G IGBT晶体管 IGBT PT MOS 7 组合 600 V 30 A TO-247

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 463 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 100 A