Microchip Technology APT35GP120B2D2G IGBT晶体管 IGBT PT MOS 7 组合 1200 V 35 A TO-247 MAX

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 543 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 96 A