Microchip Technology APT35GT120JU3 IGBT模块 PM-IGBT-TFS-SOT227

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 260 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 55 A