Microchip Technology APT40GP60B2DQ2G IGBT晶体管 IGBT PT MOS 7 组合 600 V 40 A TO-247 MAX

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 543 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 100 A