Microchip Technology APT40GP90JDQ2 SiC IGBT 模块 IGBT PT MOS 7 组合 900 V 40 A SOT-227

Technology: SiC

Unit Weight: 29.200 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 284 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 64 A