Microchip Technology APT40GR120B2D30 IGBT晶体管 IGBT MOS 8 1200 V 40 A TO-247 MAX

Width: 16.26 mm

Height: 5.31 mm

Length: 21.46 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 500 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 88 A

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 88 A

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 88 A