Microchip Technology APT45GP120JDQ2 IGBT晶体管 IGBT PT MOS 7 组合 1200 V 45 A SOT-227

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 329 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.3 V

Continuous Collector Current at 25 C: 75 A