Microchip Technology APT47GA60JD40 IGBT模块 IGBT PT MOS 8 组合 600 V 47 A SOT-227

Technology: Si

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 283 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current at 25 C: 87 A