Microchip Technology APT50GR120B2 IGBT晶体管 IGBT MOS 8 1200 V 50 A TO-247 MAX

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 694 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.5 V

Continuous Collector Current at 25 C: 117 A