Microchip Technology APT50GR120JD30 IGBT晶体管 IGBT MOS 8 1200 V 50 A SOT-227

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 417 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.5 V

Continuous Collector Current at 25 C: 84 A