Microchip Technology APT50M50L2LLG MOSFET模块 MOSFET MOS7 500 V 50 mOhm TO-264 MAX

Technology: Si

Unit Weight: 10 g

Configuration: Single

Mounting Style: Through Hole

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 893 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 89 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 3 V