Microchip Technology APT60GF120JRD IGBT晶体管 IGBT NPT 低频组合 1200 V 60 A SOT-227

Configuration: Single

Mounting Style: Screw Mount

Pd - Power Dissipation: 520 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current at 25 C: 100 A