Microchip Technology APT60GF120JRDQ3 SiC IGBT 模块 IGBT NPT 低频组合 1200 V 60 A SOT-227

Technology: SiC

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 625 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 149 A