Microchip Technology APT64GA90LD30 IGBT晶体管 IGBT PT MOS 8 组合 900 V 64 A TO-264

Width: 20.5 mm

Height: 5.21 mm

Length: 26.49 mm

Technology: Si

Unit Weight: 10.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 500 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 117 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 900 V

Continuous Collector Current Ic Max: 117 A

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 117 A