Microchip Technology APT65GP60L2DQ2GQ IGBT晶体管FG，IGBT-COMBI，600V，TO-264 MAX，RoHS

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 833 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 198 A