Microchip Technology APT68GA60LD40 IGBT晶体管 IGBT PT MOS 8 组合 600 V 68 A TO-264

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 520 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 121 A