Microchip Technology APT80GA60B IGBT晶体管 IGBT PT MOS 8 单管 600 V 80 A TO-247

Width: 5.31 mm

Height: 21.46 mm

Length: 16.26 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 625 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 143 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 143 A

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 143 A