Microchip Technology APT80GA60LD40 IGBT晶体管 IGBT PT MOS 8 组合 600 V 80 A TO-264

Width: 20.5 mm

Height: 5.21 mm

Length: 26.49 mm

Technology: Si

Unit Weight: 10.600 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 625 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 143 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 143 A

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 143 A